In this section, you can access to the latest technical information related to the FUTURE project topic.

MoS2 nanosheets functionalized with ferrocene-containing polymer via SI-ATRP for memristive devices with multilevel resistive switching

Designing and preparing memristive materials with multilevel memristive switching characteristics is an effective strategy for improving the data storage capacity of devices. Herein, by grafting a ferrocene-containing polymer (PFMMA) from molybdenum disulfide nanosheets (MoS2 NSs) via polydopamine (PDA)-mediated surface-initiated atom transfer radical polymerization (SI-ATRP), we synthesized a novel two-dimensional nanomaterial, MoS2-PDA-PFMMA. The fabricated Al/MoS2-PDA-PFMMA/ITO sandwich-structured electronic device exhibited asymmetric multilevel resistive switching characteristics, which should give it a larger data storage capacity compared with traditional electrical bistable memristive devices. This work realized multilevel resistive switching in the device by material structure design, which opens up a new perspective for developing memristive devices with ultra-large data storage capacities.

» Author: Qing Yan, Fei Fan, Bin Zhang, Gang Liu, Yu Chen

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