In this section, you can access to the latest technical information related to the FUTURE project topic.

Intramolecular rotation induced High-Temperature Self-Optimization for polymer memristor devices

Resistors are considered one of the most competitive options for next generation data storage and phenomenological computing, especially organic resistors with on-demand customization electronic properties. However, the thermal instability of organic materials and the highly localised resistive switching characteristics limit the practical use of polymer memories. In this work, a high-temperature self-optimization strategy based on intramolecular rotation is proposed for optimizing the reliability of polymer memristors. Satisfactorily, the memory device exhibits uniform switching characteristics at the sub-micron level, as well as good thermal stability and superior performance at high temperatures. This study offers a new solution to the problem of low yields and thermal instability of organic memories.

» Author: Jinglin Sun, Zhilong He, Shuzhi Liu, Fei Fan, Weihua Chen, Bin Zhang, Gang Liu

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